Abstract

This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between the adjacent nanosheets, and consequently quench the current passing through the network. We use in-operando Kelvin probe force microscopy to image electrostatic potential profiles during the operation of MoS2 nanosheet network transistors. Direct imaging of the potential drops allows us to distinguish contributions from individual nanosheets and those from junctions, correlated by the junction-related potential drops with the network morphology. A diagram-based model is developed to describe the system numerically and to estimate the current path formation probabilities. Finally, a correlation with the integral electrical characteristics of the nanosheet-based transistors is made using a robust Y-function approach. It is shown that the total junction resistance is well estimated by the proposed equivalent circiut model.