Abstract

abstract: In this chapter, a systematic investigation about the synthesis and transfer of graphene through the chemical vapor deposition (CVD) of methane (CH4) and acetylene (C2H2) as the carbon precursors onto copper substrates is provided. Raman spectroscopy enabled the characterization of the number of layers, the level of disorder and the structural changes created by the transfer process to the silicon substrates. The findings indicate that CH4 has more favorable effect on the growth of graphene films with reduced defect density and higher control of thickness than C2H2. Also, it was found out that the transfer creates effective reduction in the number of layers and changes in the relative intensities of the D, G and 2D bands, which is due to strain effects, interaction with the support polymer, and support polymer residues. These findings aid in shedding light on the processes that influence the mechanism of maintaining structural integrity of graphene in its processing and give a guideline to the manufacturing production of high-quality films to be used in electronic and photoelectrocatalytic tasks.