Modification of Akhieser mechanism in Si nanomembranes and thermal conductivity dependence of the Q-factor of high frequency nanoresonators
Keywords: Akhieser nanoscale; Q, factor; Thermal conductivity in membranes
Abstract
We present and validate a reformulated Akhieser model that takes into account the reduction of thermal conductivity due to the impact of boundary scattering on the thermal phonons' lifetime. We consider silicon nanomembranes with mechanical mode frequencies in the GHz range as textbook examples of nanoresonators. The model successfully accounts for the measured shortening of the mechanical mode lifetime. Moreover, the thermal conductivity is extracted from the measured lifetime of the mechanical modes in the high-frequency regime, thereby demonstrating that the Q-factor can be used as an indication of the thermal conductivity and/or diffusivity of a mechanical resonator.
Más información
Título según WOS: | Modification of Akhieser mechanism in Si nanomembranes and thermal conductivity dependence of the Q-factor of high frequency nanoresonators |
Título según SCOPUS: | Modification of Akhieser mechanism in Si nanomembranes and thermal conductivity dependence of the Q-factor of high frequency nanoresonators |
Título de la Revista: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volumen: | 29 |
Número: | 12 |
Editorial: | IOP PUBLISHING LTD |
Fecha de publicación: | 2014 |
Página de inicio: | 124010 |
Idioma: | English |
DOI: |
10.1088/0268-1242/29/12/124010 |
Notas: | ISI, SCOPUS |