Article ISI SCOPUS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE  (2016)

Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices

Cerbu, F; Andreev, DV; Lisoni J.; Breuil, L; Afanas'ev, VV; Stesmans, A; Houssa, M

Keywords: ru, si, charge trapping, energy barriers, floating gates, high-k insulators, photo-depopulation spectroscopy, TiNX

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Título según WOS: Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices
Título según SCOPUS: Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices
Título de la Revista: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volumen: 213
Número: 2
Editorial: WILEY-V C H VERLAG GMBH
Fecha de publicación: 2016
Página de inicio: 265
Página final: 269
DOI:

10.1002/pssa.201532416
Notas: ISI, SCOPUS