Graphene single-electron transistor as a spin sensor for magnetic adsorbates
Abstract
We study single-electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene dot with magnetic adsorbates is modeled through numerical diagonalization of a tight-binding model with an exchange potential. We consider several mechanisms by which the adsorbate magnetic state can influence transport in a single-electron transistor: tuning the addition energy, changing the tunneling rate, and in the case of spin-polarized electrodes, through magnetoresistive effects. Whereas the first mechanism is always present, the others require that the electrode has to have either an energy-or spin-dependent density of states. We find that graphene dots are optimal systems to detect the spin state of a few magnetic centers. DOI: 10.1103/PhysRevB.87.085433
Más información
Título según WOS: | ID WOS:000315146600004 Not found in local WOS DB |
Título de la Revista: | PHYSICAL REVIEW B |
Volumen: | 87 |
Número: | 8 |
Editorial: | American Physical Society |
Fecha de publicación: | 2013 |
DOI: |
10.1103/PhysRevB.87.085433 |
Notas: | ISI |