Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field
Keywords: SiGe quantum wells , modulation doping , shallow impurity , electric field
Abstract
The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The predicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.
Más información
Editorial: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
Fecha de publicación: | 2020 |
Página de inicio: | 109 |
Página final: | 113 |
Idioma: | English |
URL: | https://ieeexplore.ieee.org/abstract/document/9088792 |