Intersubband linear and nonlinear optical response of the delta-doped SiGe quantum well
Abstract
The degree of ionization, controlled by external fields, of delta-doped layers inside the quantum wells can affect their energy structure, therefore delta-doped QWs can be used to engineer different kinds of tunable THz optical devices on intersubband transitions. Here it is calculated and analyzed the linear and nonlinear (Kerr-type) optical response, including absorption coefficient and refractive index change of 20 nm-wide Si0.8Ge0.2/Si/Si0.8Ge0.2 QW structures n-delta-doped either at the center or at the edge of the well under different temperatures. The conduction subband energy structure was found self-consistently, including the calculation of the impurity binding energy. Our results show that the degree of ionization of the impurity layer as well as the heterostructure symmetry has a strong influence on optical properties of the structures in THz region. (C) 2015 Elsevier Ltd. All rights reserved.
Más información
Título según WOS: | ID WOS:000366876100022 Not found in local WOS DB |
Título de la Revista: | SUPERLATTICES AND MICROSTRUCTURES |
Volumen: | 87 |
Editorial: | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD |
Fecha de publicación: | 2015 |
Página de inicio: | 125 |
Página final: | 130 |
DOI: |
10.1016/j.spmi.2015.05.039 |
Notas: | ISI |