SYNTHESIS, X-RAY DIFFRACTION, AND RAMAN SPECTROSCOPY OF AgSnBiSe 3 AND AgSnBiSe 2 S SYSTEMS

Moris, Silvana; Barahona, Patricia; Valencia-Gálvez, Paulina; Galdámez Antonio.

Keywords: Chalcogenides, XRD patterns, Electrical characterization, Raman spectroscopy

Abstract

AgSnBiSe3 and AgSnBiSe2S were prepared by solid state reactions 950° C. The phases were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The samples were indexed in two space groups: Pm3m (No. 221) and P4/mmm (No. 123). The Raman spectra confirmed the structure of the AgSnBiSe3 and AgSnBiSe2S compounds to be distorted NaCl-type with seven characteristic signals for the Raman active modes.

Más información

Título de la Revista: CHALCOGENIDE LETTERS
Volumen: 16
Editorial: NATL INST R&D MATERIALS PHYSICS
Fecha de publicación: 2019
Página de inicio: 303
Página final: 308
Idioma: Inglés
Financiamiento/Sponsor: FONDECYT 1160685
Notas: ISI