SYNTHESIS, X-RAY DIFFRACTION, AND RAMAN SPECTROSCOPY OF AgSnBiSe 3 AND AgSnBiSe 2 S SYSTEMS
Keywords: Chalcogenides, XRD patterns, Electrical characterization, Raman spectroscopy
Abstract
AgSnBiSe3 and AgSnBiSe2S were prepared by solid state reactions 950° C. The phases were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The samples were indexed in two space groups: Pm3m (No. 221) and P4/mmm (No. 123). The Raman spectra confirmed the structure of the AgSnBiSe3 and AgSnBiSe2S compounds to be distorted NaCl-type with seven characteristic signals for the Raman active modes.
Más información
Título de la Revista: | CHALCOGENIDE LETTERS |
Volumen: | 16 |
Editorial: | NATL INST R&D MATERIALS PHYSICS |
Fecha de publicación: | 2019 |
Página de inicio: | 303 |
Página final: | 308 |
Idioma: | Inglés |
Financiamiento/Sponsor: | FONDECYT 1160685 |
Notas: | ISI |