Characterization of pure ZnO thin films prepared by a direct photochemical method

Buono-Core, GE; Cabello, G; Klahn, AH; Del Rio R.; Hill, RH

Abstract

In this paper, amorphous ZnO thin films were obtained by direct UV irradiation of β-diketonate Zn(II) precursor complexes spin-coated on Si(1 0 0) and fused silica substrates. ZnO films were characterized by means of XPS, X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). These analyses revealed that as-deposited films are amorphous and have a rougher surface than thermally treated films. Optical characterization of the films showed that these are highly transparent in the visible spectrum with an average transmittance of up to 95% over 400 nm, and an optical band-gap energy of 3.21 eV for an as-deposited film, and 3.27 eV for a film annealed at 800 °C. Low resistivity values were obtained for the ZnO films (1.0 × 10-2 Ω cm) as determined by Van der Pauw four-point probe method. © 2006 Elsevier B.V. All rights reserved.

Más información

Título según WOS: Characterization of pure ZnO thin films prepared by a direct photochemical method
Título según SCOPUS: Characterization of pure ZnO thin films prepared by a direct photochemical method
Título de la Revista: JOURNAL OF NON-CRYSTALLINE SOLIDS
Volumen: 352
Número: 38-39
Editorial: Elsevier
Fecha de publicación: 2006
Página de inicio: 4088
Página final: 4092
Idioma: English
URL: http://linkinghub.elsevier.com/retrieve/pii/S0022309306010088
DOI:

10.1016/j.jnoncrysol.2006.07.006

Notas: ISI, SCOPUS