Article
Proceedings - Electrochemical Society  (2005)

Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: Work function and electrical performance on HfO2

Deweerd, W; Schram, T. ; Van Hoornick, N.; Witters, T; Lisoni, J.; Rohr, E.; Heyns, M.; Schaekers, M.; Richard, O.; Wickramanayaka, S.; Yamada, N.; Brunco, D.