Dry Two-Step Self-Assembly of Stable Supported Lipid Bilayers on Silicon Substrates

Cisternas, Marcelo A.; Palacios-Coddou, Francisca; Molina, Sebastian; Jose Retamal, Maria; Gomez-Vierling, Nancy; Moraga, Nicolas; Zelada, Hugo; Soto-Arriaza, Marco A.; Corrales, Tomas P.; Volkmann, Ulrich G.

Abstract

Artificial membranes are models for biological systems and are important for applications. We introduce a dry two-step self-assembly method consisting of the high-vacuum evaporation of phospholipid molecules over silicon, followed by a subsequent annealing step in air. We evaporate dipalmitoylphosphatidylcholine (DPPC) molecules over bare silicon without the use of polymer cushions or solvents. High-resolution ellipsometry and AFM temperature-dependent measurements are performed in air to detect the characteristic phase transitions of DPPC bilayers. Complementary AFM force-spectroscopy breakthrough events are induced to detect single- and multi-bilayer formation. These combined experimental methods confirm the formation of stable non-hydrated supported lipid bilayers with phase transitions gel to ripple at 311.5 +/- 0.9 K, ripple to liquid crystalline at 323.8 +/- 2.5 K and liquid crystalline to fluid disordered at 330.4 +/- 0.9 K, consistent with such structures reported in wet environments. We find that the AFM tip induces a restructuring or intercalation of the bilayer that is strongly related to the applied tip-force. These dry supported lipid bilayers show long-term stability. These findings are relevant for the development of functional biointerfaces, specifically for fabrication of biosensors and membrane protein platforms. The observed stability is relevant in the context of lifetimes of systems protected by bilayers in dry environments.

Más información

Título según WOS: Dry Two-Step Self-Assembly of Stable Supported Lipid Bilayers on Silicon Substrates
Título de la Revista: INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
Volumen: 21
Número: 18
Editorial: MDPI
Fecha de publicación: 2020
DOI:

10.3390/IJMS21186819

Notas: ISI