An electrochemical deposition route for obtaining alpha-Fe2O3 thin films - II. EQCM study and semiconductor properties

Schrebler, R; Llewelyn, C; Vera, F; Cury P.; Muñoz E; Del Rio R.; Meier, HG; CORDOVA, R; Dalchiele, EA

Abstract

The electrochemical formation of hematite (α- Fe2 O3) precursor thin films (oxyhydroxide iron compounds), onto gold substrates in an aqueous solution of Fe(III)+KF+ H2 O2 was investigated in situ using an electrochemical quartz crystal microbalance (EQCM) and voltammetric techniques. Nanostructured α- Fe2 O3 obtained after annealing of oxyhydroxide iron compounds thin films have been prepared onto SnO2 F covered glass substrates through a potential cycling procedure in this electrolytic bath. Photoelectrochemical measurements, carried out in 0.1 M NaOH+0.05 M KI electrolyte at pH 13, show an n-type behavior, a flatband potential of -1.08 V vs saturated mercury/mercury sulfate reference electrode, and an apparent donor density of 1.26× 1019 cm-3 at 1 kHz. © 2007 The Electrochemical Society.

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Título según WOS: An electrochemical deposition route for obtaining alpha-Fe2O3 thin films - II. EQCM study and semiconductor properties
Título según SCOPUS: An electrochemical deposition route for obtaining a- Fe 2O3 thin films: II. EQCM study and semiconductor properties
Título de la Revista: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volumen: 10
Número: 10
Editorial: TAYLOR & FRANCIS LTD
Fecha de publicación: 2007
Página de inicio: D95
Página final: D99
Idioma: English
URL: http://esl.ecsdl.org/cgi/doi/10.1149/1.2756160
DOI:

10.1149/1.2756160

Notas: ISI, SCOPUS