Growth and morphology of ultra-thin Ni films on Pd(100)

Parra C.; Haberle, P.; Martins, MD; Macedo, WAA

Abstract

A series of Ni films with thickness from 0.2 monolayers (ML) to 12.5 ML were epitaxially grown on a Pd(1 0 0) substrate at room temperature. Growth and morphology were investigated by scanning tunneling microscopy (STM), reflection-high-energy-electron diffraction (RHEED) and Auger electron spectroscopy (AES). We found that the strain relief mechanism for the tetragonal distorted films is related with the appearance of 1 Å high-filaments. © 2008 Elsevier Ltd. All rights reserved.

Más información

Título según WOS: Growth and morphology of ultra-thin Ni films on Pd(100)
Título según SCOPUS: Growth and morphology of ultra-thin Ni films on Pd(1 0 0)
Título de la Revista: MICROELECTRONICS JOURNAL
Volumen: 39
Número: 11
Editorial: ELSEVIER SCI LTD
Fecha de publicación: 2008
Página de inicio: 1229
Página final: 1230
Idioma: English
URL: http://linkinghub.elsevier.com/retrieve/pii/S0026269208000359
DOI:

10.1016/j.mejo.2008.01.050

Notas: ISI, SCOPUS