Dielectric and piezoelectric characterization of PSZT-BT ceramics for capacitor applications
Abstract
The ceramic compositions (1 - x Pb 0.9875Sr 0.0125 (Zr 0.53Ti 0.47)O 3-xBaTiO 3 where x = 0.2, 0.4, 0.6 and 0.8, fabricated through solid state reaction method were investigated for phase formation, microstructure, density, dielectric and piezoelectric properties. The X-ray diffraction patterns indicated that introduction of BaTiO 3in isovalent donor Sr modified PZT lattice, diminished the tetragonality. All the specimens were homogenous in nature due to the coarse grains of BaTiO 3, which had undergone inter-granular growth and were homogeneously distributed within the PSZT-BT lattice. Introduction of BaTiO 3 in PSZT perovskite lattice resulted in enhanced grain growth till x = 0.6 (2.03 μm). Dielectric properties (ε RT, Tanδ and T c) were influenced by both BaTiO 3 and Sr. The maximum ε RT = 1588 and ε Tc = 10478 were found in 0.2PSZT-0.8BT ceramic system. The optimum dielectric permittivity at room temperature with a low Curie transition temperature was found in 0.2PSZT-0.8BT composition. Piezoelectric properties are very sensitive to isovalent substitutions, where isovalent donor Sr modification and BT concentrations in PZT, affected the piezoelectric properties (k p and d 33) in the ceramic system. Thus, the series PSZT-BT compositions could be ideal candidates for capacitors and suitable sensor applications. © Springer Science+Business Media, LLC 2007.
Más información
Título según WOS: | Dielectric and piezoelectric characterization of PSZT-BT ceramics for capacitor applications |
Título según SCOPUS: | Dielectric and piezoelectric characterization of PSZT-BT ceramics for capacitor applications |
Título de la Revista: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS |
Volumen: | 19 |
Número: | 4 |
Editorial: | Springer |
Fecha de publicación: | 2008 |
Página de inicio: | 373 |
Página final: | 378 |
Idioma: | English |
URL: | http://link.springer.com/10.1007/s10854-007-9346-x |
DOI: |
10.1007/s10854-007-9346-x |
Notas: | ISI, SCOPUS |