Synthesis, X-ray diffraction, and Raman Spectroscopy of AgSnBiSe3 and AgSnBiSe2S Systems
Keywords: chalcogenides, raman spectroscopy, electrical characterization, XRD patterns
Abstract
AgSnBiSe3 and AgSnBiSe2S were prepared by solid state reactions at 950 °C. The phases were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The samples were indexed in two space groups: Pm3̅m (No. 221) and P4/mmm (No. 123). The Raman spectra confirmed the structure of the AgSnBiSe3 and AgSnBiSe2S compounds to be distorted NaCl-type with seven characteristic signals for the Raman active modes.
Más información
| Título de la Revista: | CHALCOGENIDE LETTERS | 
| Volumen: | 16 | 
| Fecha de publicación: | 2019 | 
| Página de inicio: | 303 | 
| Página final: | 308 | 
| Notas: | ISI |