Abstract

Photovoltaic cells, based on quantum dots implementation in the intrinsic region, are one of the most widely studied concepts nowadays to obtain a high solar conversion efficiency. The challenge in this third generation of solar cells is to find a good combination of materials that allows obtaining higher efficiency with low cost. In this study, we consider a juxtaposition of two kinds of quantum dots (dot/barrier) inside the I region of the PIN junction: the first combination of semiconductors includes the two configurations, PbTe/CdTe and PbSe/ZnTe, and the second combination is InN/GaN. Thus the intermediate band can be tailored by controlling the size of the dots and the inter-dot distances. The principal interest of this investigation is to determine the optimized parameters (the dot size and the inter-dot distance), leading to obtain a better solar cell efficiency. Intermediate bands, their positions, and their widths, are determined using 3D confined particles (electron and hole). Their energy levels are determined by solving the Schrodinger equation and solving the well-known dispersion relation in the Kronig-Penney model.