Siracusa: A 16 nm Heterogenous RISC-V SoC for Extended Reality With At-MRAM Neural Engine

Prasad, Arpan Suravi; Scherer, Moritz; Conti, Francesco; Rossi, Davide; Mauro, Alfio Di; Eggimann, Manuel; Gomez, Jorge Tomas; Li, Ziyun; Sarwar, Syed Shakib; Wang, Zhao; De Salvo, Barbara; Benini, Luca

Abstract

Extended reality (XR) applications are machine learning (ML)-intensive, featuring deep neural networks (DNNs) with millions of weights, tightly latency-bound (10-20 ms end-to-end), and power-constrained (low tens of mW average power). While ML performance and efficiency can be achieved by introducing neural engines within low-power systems-on-chip (SoCs), system-level power for nontrivial DNNs depends strongly on the energy of non-volatile memory (NVM) access for network weights. This work introduces Siracusa, a near-sensor heterogeneous SoC for next-generation XR devices manufactured in 16 nm CMOS. Siracusa couples an octa-core cluster of RISC-V digital signal processing (DSP) cores with a novel tightly coupled 'At-Memory' integration between a state-of-the-art digital neural engine called N-EUREKA and an on-chip NVM based on magnetoresistive random access memory (MRAM), achieving 1.7× higher throughput and 3× better energy efficiency than XR SoCs using NVM as background memory. The fabricated SoC prototype achieves an area efficiency of 65.2 GOp/s/mm2 and a peak energy efficiency of 8.84 TOp/J for DNN inference while supporting complex, heterogeneous application workloads, which combine ML with conventional signal processing and control. © 1966-2012 IEEE.

Más información

Título según WOS: Siracusa: A 16 nm Heterogenous RISC-V SoC for Extended Reality With At-MRAM Neural Engine
Título según SCOPUS: Siracusa: A 16 nm Heterogenous RISC-V SoC for Extended Reality With At-MRAM Neural Engine
Título de la Revista: IEEE Journal of Solid-State Circuits
Volumen: 59
Número: 7
Editorial: Institute of Electrical and Electronics Engineers Inc.
Fecha de publicación: 2024
Página de inicio: 2055
Página final: 2069
Idioma: English
DOI:

10.1109/JSSC.2024.3385987

Notas: ISI, SCOPUS