Abstract

In this study, lanthanum-doped titanium dioxide (La-doped TiO2) was synthesized and characterized for the photoconductivity study in an air medium. TiO2 is well-known semiconductor with excellent optical and electrical properties, making it ideal candidate for optoelectronics applications. However, the incorporation of rare-earth element like La can significantly alter its performance, particularly under light exposure. Further, in this study, the effect of annealing was also carried out. The photosensitivity of La-doped TiO2 sample annealed at 600 °C shows better photosensitivity as compared to other samples. This enhancement is attributed to the increased carrier concentration and reduced recombination rates of photo-generated electron-hole pairs due to doping of lanthanum. These findings suggest that La-doped TiO2 holds potential for applications in photodetectors, UV sensors, and other optoelectronic devices operating in ambient conditions. © 2024 Elsevier B.V.