Abstract

In this study, lanthanum-doped titanium dioxide (La-doped TiO2) was synthesized and characterized for the photoconductivity study in an air medium. TiO2 is well-known semiconductor with excellent optical and electrical properties, making it ideal candidate for optoelectronics applications. However, the incorporation of rareearth element like La can significantly alter its performance, particularly under light exposure. Further, in this study, the effect of annealing was also carried out. The photosensitivity of La-doped TiO2 sample annealed at 600 degrees C shows better photosensitivity as compared to other samples. This enhancement is attributed to the increased carrier concentration and reduced recombination rates of photo-generated electron-hole pairs due to doping of lanthanum. These findings suggest that La-doped TiO2 holds potential for applications in photodetectors, UV sensors, and other optoelectronic devices operating in ambient conditions.