Tailoring of titanium dioxide thin film in dual radiofrequency plasma enhanced pulsed laser deposition

Villegas, Rodrigo; Tomlinson, Matías; Ureta De La Fuente, Valentina; Carrasco, Camilo; Miranda, Maximiliano; Fernández, José Ignacio; Saavedra, Daniel; Retamal, Maria jose; Inestrosa-Izurieta, María José; Singh, Dinesh Pratap; Angel, Felipe A.; Volkmann, Ulrich G.; Takamura, Yayoi; Bhuyan, Heman

Keywords: Dual radio frequency plasma-enhanced pulsed laser deposition of Titanium dioxide thin film, Modulation of Titanium dioxide thin film under Low and High radio frequency, Low-frequency power seems to be more effective in modifying the anatase/rutile crystalline phases of TiO2, High-frequency power promotes the formation of oxygen vacancies and results in a decrease in the band gap of the films. The measurements of band gap should be interpreted as indicative trends rather than exact values.

Abstract

Efficient and cost-effective methods to create photovoltaic materials are constantly being sought, with metal oxides like TiO2 playing a key role in this field. In this study, TiO2 thin films were grown on glass substrates using a dual radiofrequency (RF) plasma-enhanced pulsed laser deposition (PLD) system with a thermal budget that remained below 400 °C. The physical, chemical, and optical properties of the deposited thin films were studied as a function of low- and high-RF powers as well as deposition time. These parameters were found to impact the proportion of anatase and rutile phase and their crystallinity, as well as the oxygen vacancy concentration and band gap energy. These findings demonstrated the utility of dual RF plasma-enhanced PLD for precise modulation of TiO2 thin-films, offering promising applications in photovoltaics and photocatalysis

Más información

Título de la Revista: APPLIED SURFACE SCIENCE
Editorial: Elsevier
Fecha de publicación: 2025
Página de inicio: 163872
Idioma: ingles
Financiamiento/Sponsor: This work was supported by the ANID-FONDECYT 1220359 regular project. R.V. acknowledges support from ANID doctoral fellowship (ANID/Doctorado Nacional/21241469). U.V. acknowledges the support of PUENTE 2024/25 from UC Chile. HB and YT acknowledge the 2023
URL: https://doi.org/10.1016/j.apsusc.2025.163872
DOI:

DOI: 10.1016/j.apsusc.2025.163872

Notas: WOS Core Collection ISI