Abstract

Multilayer (ML) indium-saving antimony-doped ITO thin films were deposited onto glass substrates preheated at 523 K by a sputtering method. The very thin layer was deposited using a target of conventional ITO (90 mass % In2O3 and 10 mass % SnO2) and the second layer was sputtered from antimony-doped indium saving ITO target (50 mass % In2O3 and 45 mass % SnO2, 5 mass % Sb2O5). ML indium-saving antimony-doped ITO thin films showed a significant decrease of the volume resistivity in comparison with single layer ones and an average transmittance higher than 80% in the visible range. © 2025 Taylor & Francis Group, LLC.