Projected topological branes
Abstract
Nature harbors crystals of dimensionality (d) only up to three. Here we introduce the notion of projected topological branes (PTBs): Lower-dimensional branes embedded in higher-dimensional parent topological crystals, constructed via a geometric cut-and-project procedure on the Hilbert space of the parent lattice Hamiltonian. When such a brane is inclined at a rational or an irrational slope, either a new lattice periodicity or a quasicrystal emerges. The latter gives birth to topoquasicrystals within the landscape of PTBs. As such PTBs are shown to inherit the hallmarks, such as the bulk-boundary and bulk-dislocation correspondences, and topological invariant, of the parent topological crystals. We exemplify these outcomes by focusing on two-dimensional parent Chern insulators, leaving its signatures on projected one-dimensional (1D) topological branes in terms of localized endpoint modes, dislocation modes and the local Chern number. Finally, by stacking 1D projected Chern insulators, we showcase the imprints of three-dimensional Weyl semimetals in d = 2, namely the Fermi arc surface states and bulk chiral zeroth Landau level, responsible for the chiral anomaly. Altogether, the proposed PTBs open a realistic avenue to harness higher-dimensional (d > 3) topological phases in laboratory. Authors introduce a new class of topological materials, namely projected topological branes that are holographic images of higher-dimensional topological crystals, and feature either emergent crystalline or aperiodic quasicrystalline order. They manifest bulk-boundary and bulk-lattice defect correspondences of parent crystals and open a realistic route to harness four and higher-dimensional topological crystals in three-dimensional world.
Más información
| Título según WOS: | Projected topological branes |
| Título según SCOPUS: | Projected topological branes |
| Título de la Revista: | COMMUNICATIONS PHYSICS |
| Volumen: | 5 |
| Número: | 1 |
| Editorial: | BERLIN |
| Fecha de publicación: | 2022 |
| Idioma: | English |
| DOI: |
10.1038/s42005-022-01006-x |
| Notas: | ISI, SCOPUS |