Abstract

The electron-phonon interaction is a cornerstone of condensed matter physics, playing a pivotal role in the properties of solid-state systems. When localized electronic states are coupled to lattice vibrations, phonons can induce memory effects. This study explores the non-equilibrium dynamics of a negatively charged silicon-vacancy center in diamond, analyzing the effects of both single phonon mode and structured phonon environment. Using numerical simulations and theoretical analysis, we employ trace distance as a metric to identify and understand memory effects in the transient dynamics and non-Markovian evolution. We systematically investigate the impact of longitudinal and transverse magnetic fields, phonon coupling strengths, Fock states, localized vibrations, and temperature on memory effects in this solid-state system. Our findings provide deeper insights into the interplay between electronic states and phonon environments, offering a comprehensive understanding of the conditions that govern the backflow of information in quantum solid-state devices. © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.