Preparation and Photoelectrochemical Characterization of Porphyrin-Sensitized alpha-Fe2O3 Thin Films
Abstract
The photoelectrochemical response of electrodeposited hematite (α -Fe2 O3) thin films, whose surface has been sensitized by the adsorption of 5,10,15,20-tetrakis(4-carboxyphenyl)porphyrin (TCPP), was studied. The α -Fe2 O3 thin films were obtained by the annealing of an electrodeposited Β -FeOOH precursor layer. The structural and morphological characteristics of the resulting hematite films were studied by X-ray diffraction, scanning electron microscopy, and atomic force microscopy techniques. The semiconducting characteristics of unmodified and sensitized TCPP hematite films were determined by electrochemical impedance measurements and by Mott-Schottky analysis. The hematite films exhibited an n-type behavior and a donor carrier concentration (ND =3× 1017 cm-3) for both unmodified and TCPP-sensitized ones. However, it was observed that the presence of TCPP shifts the energy of the surface states to higher values. The photoelectrochemical response of the unmodified and sensitized α -Fe2 O3 electrodes was followed by means of photovoltammetry and photocurrent-time transient techniques in a 0.1 M NaOHK+0.1 M KI solution under 25 mW/ cm2 white light illumination. The results showed that the photocurrent response exhibited by the TCPP-sensitized hematite films was 70% higher than the unmodified ones. © 2010 The Electrochemical Society.
Más información
| Título según WOS: | Preparation and Photoelectrochemical Characterization of Porphyrin-Sensitized alpha-Fe2O3 Thin Films |
| Título según SCOPUS: | Preparation and photoelectrochemical characterization of porphyrin-sensitized ? -Fe2 O3 thin films |
| Título de la Revista: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volumen: | 157 |
| Número: | 5 |
| Editorial: | ELECTROCHEMICAL SOC INC |
| Fecha de publicación: | 2010 |
| Página de inicio: | D302 |
| Página final: | D308 |
| Idioma: | English |
| URL: | http://jes.ecsdl.org/cgi/doi/10.1149/1.3357257 |
| DOI: |
10.1149/1.3357257 |
| Notas: | ISI, SCOPUS |