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Interfacial reactions in the system BaTiO3/SiO2/Si Reacciones interfaciales en el sistema BaTiO3/SiO2/Si
Keywords: spectroscopy, films, electron, silicon, ion, barium, silica, ray, substrates, interfaces, thin, depth, photoelectron, multilayers, annealing, assisted, flash, interdiffusion, profiling, X, (materials), titanate, (solids), Auger
Abstract
Barium Titanate (BaTiO3) thin films were evaporated in ultra high vacuum conditions onto SiO2/Si substrates. The substrate temperature during evaporation was around 70 °C and the film thickness was 70 nm. Some samples were flash annealed in oxygen at 500 °C. The reactions were studied by XPS ans AES argon ion assisted depth profiling. The depth profiles suggested strong interdiffusion, with barium being the dominant moving species. Titanium diffusion was lower and barium was detected on the SiO2/Si interface.
Más información
| Título de la Revista: | INFORMACION TECNOLOGICA |
| Volumen: | 8 |
| Número: | 4 |
| Editorial: | Información tecnológica |
| Fecha de publicación: | 1997 |
| Página de inicio: | 105 |
| Página final: | 108 |
| URL: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0030689892&partnerID=q2rCbXpz |