Abstract

We investigate theoretically the influence of an external magnetic field on the energy levels of shallow acceptor impurities in GaAs/Ga1-x Alx As quantum dots. We calculate the impurity states in the effective-mass approximation using a formalism based on a four-band model that includes the coupling of spin to the magnetic field as well as the complicated valence-band structure of the host semiconductor. We discuss the effect on the acceptor binding energies of the different regimes of confinement by illustrating the competing action between the magnetic field confinement and the quantum-size confinement.