Abstract

A dual stage technique employing hot filament chemical vapor deposition (HFCVD) and radio frequency sputtering was used to synthesize SiN/BCNTs (bamboo like carbon nanotubes) on copper substrates. The films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Electron field emission studies (EFE), charge–discharge, and cyclic voltammetry. The comprehensive characterization is consistent with a nanolayer of amorphous SiN on BCNTs. Field emission experiments confirm the excellent contact of the SiN nanolayer with the surface of the BCNTs necessary for fabrication of a coin cell. Electrochemical testing shows that SiN/BCNT electrode can deliver an initial discharge capacity of 2000 mAh g−1 which is higher than the capacity of graphite and the reversible capacity after ten cycles is 300 mAh g−1. The cyclic voltammetry results suggest good reversibility with Li during cycling.