Abstract

Changes in the surface activity of n-Si after being exposed to a solution containing hydroxyl ((OH)-O-center dot) radicals were approached. These changes caused by the interaction between silicon and the (OH)-O-center dot radicals were characterized by analyzing the nucleation and growth mechanisms of copper electrodeposited on silicon. Thus, both copper depositions on n-Si without prior exposure to hydroxyl radicals and with it at different exposure periods were analyzed. By means of j/t transients analysis a change in the nucleation and growth mechanisms of copper on n-Si was observed, from 3D progressive nucleation diffusion-controlled growth for the system unexposed to the radical to 3D instantaneous nucleation diffusion-controlled growth, when the semiconductor substrate was exposed to the radicals (OH)-O-center dot. These changes were corroborated through ex situ Atomic Force Microscopy. (C) 2014 Elsevier B.V. All rights reserved.