Electronic structure of CdTe using GGA plus USIC

Menendez-Proupin, E; Amezaga, A; Cruz-Hernandez, N

Abstract

A simple method to obtain a gap-corrected band structure of cadmium telluride within density Functional theory is presented. On-site Coulomb self-interaction-like correction potential has been applied to the 5p-shell of Te and the 4d-shell of Cd. The predicted physical properties are similar to or better than those obtained with hybrid functionals and at largely reduced computational cost. In addition to the corrected electronic structure, the lattice parameters and the bulk modulus are improved. The relative stabilities of the different phases (zincblende, wurtzite, rocksalt and cinnabar) are preserved. The formation energy of the cadmium vacancy remains close to the values obtained from hybrid functional calculations. (C) 2014 Elsevier B.V. All rights reserved,

Más información

Título según WOS: Electronic structure of CdTe using GGA plus USIC
Título según SCOPUS: Electronic structure of CdTe using GGA+USIC
Título de la Revista: PHYSICA B-CONDENSED MATTER
Volumen: 452
Editorial: Elsevier
Fecha de publicación: 2014
Página de inicio: 119
Página final: 123
Idioma: English
URL: http://linkinghub.elsevier.com/retrieve/pii/S0921452614005493
DOI:

10.1016/j.physb.2014.07.015

Notas: ISI, SCOPUS