Article
Journal de Physique IV France  (2005)

Characterisation of In2S3 and ZnO thin films for photovoltaic application using Photothermal deflection technique

Paulraj, M.; Ramkumar, S.; Amjith, P.R.; Therasa John, T.; Ratheeshkumar, P.M.; Sudhakartha, C.; Vijayakumar, K.P.; Nair, K:G.M.

Abstract

ZnO and In2 S3 thin films useful for photovoltaic application were studied using Photothermal deflection (PTD) spectroscopy. Mobility of carriers obtained from PTD was found to be in good agreement with reported values. Thickness measurements were also carried out. It was found to be in good agreement with stylus method.

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Título de la Revista: Journal de Physique IV France
Volumen: 125
Fecha de publicación: 2005
Página de inicio: 469
Página final: 472
Idioma: English
Notas: ISI