Abstract

Photothermal deflection spectroscopic technique was used to study Arþ implanted cadmium sulphide thin films. Variations in grain size and lattice strain due to Arþ irradiation were analysed using X-ray diffraction. Thickness of damaged layer in CdS due to Arþ implantation was calculated using photothermal deflection technique and compared with results from Stopping and Range of Ions in Matter.