Electrodeposition and characterization of ZnSe semiconductor thin films

Riveros, G; Gómez H.; Henríquez R.; Schrebler, R; Marotti, RE; Dalchiele, EA

Abstract

In this work, results on the preparation and characterization of ZnSe thin films obtained by electrodeposition are presented. Voltammetric curves were recorded in order to characterize the electrochemical behavior of the Zn+2/SeO2 system on different substrates. Thin films were deposited potentiostatically from an unstirred, deareated aqueous solution onto titanium, glass substrates coated with fluorine doped tin oxide and ITO glass substrates. The effect of main parameters such as the deposition potential, SeO2 concentration and annealing on film composition and structure were analyzed. The as-grown and treated layers were characterized by X-ray energy dispersive analysis, X-ray diffraction, scanning electron microscopy and photoelectrochemical studies. Optical measurements were done on these samples which gave a clear band edge near 2.6 eV quite close to the accepted room temperature value of 2.7 eV for ZnSe. © 2001 Elsevier Science B.V. All rights reserved.

Más información

Título según WOS: Electrodeposition and characterization of ZnSe semiconductor thin films
Título según SCOPUS: Electrodeposition and characterization of ZnSe semiconductor thin films
Título de la Revista: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volumen: 70
Número: 3
Editorial: ELSEVIER SCIENCE BV
Fecha de publicación: 2001
Página de inicio: 255
Página final: 268
Idioma: English
URL: http://linkinghub.elsevier.com/retrieve/pii/S0927024801000666
DOI:

10.1016/S0927-0248(01)00066-6

Notas: ISI, SCOPUS