Abstract

The electrochemical method for epitaxial growth of II-VI semiconductor films was applied to ZnSe on GaAs and InP, using a specially designed electrolyte based on the use of selenosulfate ions as precursors. This precursor prevented the co-deposition of elemental selenium, which hinders the growth of ZnSe crystals. Reflection high energy electron diffraction diagram of a ZnSe layer showed the presence of a dot pattern. This demonstrated that epitaxial growth was achieved and it corresponded to cubic ZnSe with (100) in-plane orientation.