Resonant Raman scattering off neutral quantum dots

Delgado, A; Gonzalez, A; Menendez-Proupin, E

Abstract

Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number N=42 of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density excitations) of similar magnitude as the amplitudes related to weakly collective or single-particle excitations. As a function of the incident laser frequency or the magnetic field, they are rapidly varying amplitudes. It is argued that strong Raman peaks should come out in the spin-density channels, not related to valence-band mixing effects in the intermediate states.

Más información

Título según WOS: ID WOS:000175147100079 Not found in local WOS DB
Título de la Revista: PHYSICAL REVIEW B
Volumen: 65
Número: 15
Editorial: American Physical Society
Fecha de publicación: 2002
DOI:

10.1103/PhysRevB.65.155306

Notas: ISI