Abstract

During the obtaining of semiconductor materials by some growth techniques the film structure forms randomly according to how the species arrive to the subtract. If the film is a material with three or more elements they can organize in several compounds, which have only local order and even become amorphous. As a consequence the physico-chemical parameters manifest non-typical behaviors other than in pure materials. In the present work we develop a dynamical-probabilistic model, which describes quantitatively such composition mixture and was applied on the behavior of the absorption profiles of CdTeO films grown by radio frequency (rf) sputtering with different oxygen concentrations. The model can be applied to films obtained by other growth techniques.