Resonant Raman scattering in asymmetric semiconductor quantum disks
Abstract
We report a theoretical study of the first-order resonant Raman scattering by optical phonons in self-assembled quantum dots (SAQDs). We consider the SAQD as a cylindrical disk with elliptical cross section to simulate shape and confinement anisotropies obtained during the SAQD growth. The lateral confinement anisotropy is modelled by harmonic potentials with two different frequencies. In an envelope function Hamiltonian approach and using matrix diagonalization techniques, the exciton wave function and energy states are calculated as function of SAQD parameters. Raman scattering polarizability is obtained for a Frohlich coupling between exciton and confined-phonons. We analyze how the Raman scattering technique could give information on confinement anisotropy effects and SAQDs geometry. Here, characteristic results for SAQDs of CdSe dots in ZnSe are presented.
Más información
Título según WOS: | ID WOS:000082487800075 Not found in local WOS DB |
Título de la Revista: | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS |
Volumen: | 215 |
Número: | 1 |
Editorial: | WILEY-V C H VERLAG GMBH |
Fecha de publicación: | 1999 |
Página de inicio: | 459 |
Página final: | 463 |
DOI: |
10.1002/(SICI)1521-3951(199909)215:1 |
Notas: | ISI |