Abstract

Resonant Raman scattering in spherical semiconductor quantum dots is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) uncorrelated electron-hole pairs in the strongly size-dependent quantized regime; (II) Wannier-Mott excitons in an infinite potential well; (III) excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolute values of the scattering intensities and substantially modify the Raman lineshape, even in the strong confinement regime.