High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Nagy, Roland; Niethammer, Matthias; Widmann, Matthias; Chen, Yu-Chen; Udvarhelyi, Péter; Bonato, Cristian; Hassan, Jawad Ul; Karhu, Robin; Ivanov, Ivan G.; Son, Nguyen Tien; Maze, Jeronimo R.; Ohshima, Takeshi; Soykal, Öney O.; Gali, Ádám; Lee, Sang-Yun; et. al.

Abstract

Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin-optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron-phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its (4)A(2) symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with similar to 1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.

Más información

Título según WOS: High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
Título según SCOPUS: High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
Título de la Revista: NATURE COMMUNICATIONS
Volumen: 10
Editorial: NATURE PORTFOLIO
Fecha de publicación: 2019
Idioma: English
DOI:

10.1038/s41467-019-09873-9

Notas: ISI, SCOPUS