High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
Abstract
Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin-optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron-phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its (4)A(2) symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with similar to 1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
Más información
Título según WOS: | High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide |
Título según SCOPUS: | High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide |
Título de la Revista: | NATURE COMMUNICATIONS |
Volumen: | 10 |
Editorial: | Nature Publishing Group |
Fecha de publicación: | 2019 |
Idioma: | English |
DOI: |
10.1038/s41467-019-09873-9 |
Notas: | ISI, SCOPUS |