Charge smoothening and band flattening due to Hartree corrections in twisted bilayer graphene
Abstract
Doping twisted bilayer graphene away from charge neutrality leads to an enormous buildup of charge inhomogeneities within each moire unit cell. Here, we show, using unbiased real-space self-consistent Hartree calculations on a relaxed lattice, that Coulomb interactions smoothen this charge imbalance by changing the occupation of earlier identified "ring" orbitals in the AB/BA region and "center" orbitals at the AA region. For hole doping, this implies an increase of the energy of the states at the Gamma point, leading to a further flattening of the flat bands and a pinning of the Van Hove singularity at the Fermi level. The charge smoothening will affect the subtle competition between different possible correlated phases.
Más información
Título según WOS: | Charge smoothening and band flattening due to Hartree corrections in twisted bilayer graphene |
Título según SCOPUS: | Charge smoothening and band flattening due to Hartree corrections in twisted bilayer graphene |
Título de la Revista: | PHYSICAL REVIEW B |
Volumen: | 100 |
Número: | 20 |
Editorial: | AMER PHYSICAL SOC |
Fecha de publicación: | 2019 |
Idioma: | English |
DOI: |
10.1103/PhysRevB.100.205114 |
Notas: | ISI, SCOPUS |