Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55 mu m
Abstract
We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55 mu m by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhancement of nonlinear optical effects, resulting in 30 % of modulation depth. We introduce the development of an ultrafast mode-locked fiber laser using an improved InN-based saturable absorber that incorporates a buffer layer between the active layer and the substrate. The laser delivers output pulses with a temporal width of similar to 220 fs, a repetition rate of 5.25 MHz, and high-pulse energy of 5.8 nJ. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Más información
Título según WOS: | ID WOS:000473336100006 Not found in local WOS DB |
Título de la Revista: | OPTICAL MATERIALS EXPRESS |
Volumen: | 9 |
Número: | 7 |
Editorial: | OPTICAL SOC AMER |
Fecha de publicación: | 2019 |
Página de inicio: | 2785 |
Página final: | 2792 |
DOI: |
10.1364/OME.9.002785 |
Notas: | ISI |