Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55 mu m

Monroy, L.; Jimenez-Rodriguez, M.; Ruterana, P.; Monroy, E.; Gonzalez-Herraez, M.; Naranjo, F. B.

Abstract

We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55 mu m by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhancement of nonlinear optical effects, resulting in 30 % of modulation depth. We introduce the development of an ultrafast mode-locked fiber laser using an improved InN-based saturable absorber that incorporates a buffer layer between the active layer and the substrate. The laser delivers output pulses with a temporal width of similar to 220 fs, a repetition rate of 5.25 MHz, and high-pulse energy of 5.8 nJ. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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Título según WOS: ID WOS:000473336100006 Not found in local WOS DB
Título de la Revista: OPTICAL MATERIALS EXPRESS
Volumen: 9
Número: 7
Editorial: OPTICAL SOC AMER
Fecha de publicación: 2019
Página de inicio: 2785
Página final: 2792
DOI:

10.1364/OME.9.002785

Notas: ISI