Abstract

In this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reactive radio-frequency magnetron sputtering. The fabricated devices show a sublinear dependence of the photocurrent as a function of the incident optical power. The above-the-band-gap responsivity reaches 7W/A for an irradiance of 10W/m(2) (405nm wavelength). The response decreases smoothly for below-the-bandgap excitation, dropping by more than an order of magnitude at 633nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.