Abstract

In this work, we investigate the effects of deposition conditions on the structural and morphological properties of AlInN thin films deposited on p-doped Si(111) substrates by reactive radio-frequency sputtering. The aluminum composition can be tuned in the 0 to 0.36 range by changing the power applied to the aluminum target. Al incorporation leads to a change in the layer morphology and improvement of the rms surface roughness of the layers. The compact Al0.36In0.64N sample grown at 550 degrees C exhibits intense room-temperature photoluminescence centered at 1.75 eV. (C) 2016 The Japan Society of Applied Physics