Abstract

We report on the third.-order optical nonlinearity of the e(1) - e(2) intersubband transition in GaN-AlN quantum wells and the s - p(z) intraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 mu m. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for optical switching and wavelength conversion applications.