ConferencePaper SCOPUS
Proceedings of the 2020 IEEE/SICE International Symposium on System Integration, SII 2020  (2019)

Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave

Venkatesan N.; Silva-Oelker G.; Fay P.

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Título según SCOPUS: Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave
Título de la Revista: Proceedings of the 2020 IEEE/SICE International Symposium on System Integration, SII 2020
Editorial: Institute of Electrical and Electronics Engineers Inc.
Fecha de publicación: 2019
Idioma: English
DOI:

10.1109/BCICTS45179.2019.8972753
Notas: SCOPUS