Background impurities and a delta-doped QW. Part I: Center doping

Akimov V.; Tulupenko V.; Duque C.A.; Morales A.L.; Demediuk R.; Tiutiunnyk A.; Laroze D.; Kovalov V.; Sushchenko D.

Abstract

The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-layer. The delta-layer impurity binding energy as well as the energy differences between the first quantized electron subbands in the well demonstrate a significant dependence on the characteristics of the background doping. Therefore, the background doping cannot be neglected when studying phenomena like intersubband optical transitions.

Más información

Título según WOS: Background impurities and a delta-doped QW. Part I: Center doping
Título según SCOPUS: Background impurities and a delta-doped QW. Part I: Center doping
Título de la Revista: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volumen: 34
Número: 12
Editorial: IOP PUBLISHING LTD
Fecha de publicación: 2019
Idioma: English
DOI:

10.1088/1361-6641/ab4c7a

Notas: ISI, SCOPUS