Abstract

In this study, amorphous carbon buffer layer containing nano-crystalline diamond grains was pre-deposited on single crystal silicon (Si) wafers. (100) oriented diamond films were prepared on the buffer layer by increasing deposition temperature. Morphology observation demonstrated that (100) oriented diamond plates appear on the buffer layer, thus realizing the deposition of (100) oriented diamond film. Transmission electron microscopy confirmed that (100) oriented diamond dominates deposition at high temperatures, leading to the formation of the (100) oriented diamond plates. The fast lateral growth of nano-crystalline diamond grains with (100) orientation in the buffer layer is the main driving force for the deposition of (100) oriented diamond film, providing a new route for the preparation of (100) oriented diamond films.