Facile synthesis of highly fluorescent free-standing films comprising graphitic carbon nitride (g-C3N4) nanolayers
Abstract
Astounding graphitic carbon nitride (g-C3N4) nanostructures have attracted huge attention due to their unique electronic structures, suitable band gap, and thermal and chemical stability, and are insinuating as a promising candidate for photocatalytic and energy harvesting applications. The growth of a free-standing film is desirable for widespread electronic devices and electrochemical applications. Here, we present a facile approach to prepare free-standing films (15 mm x 10 mm x 0.5 mm) comprising g-C3N4 nanolayers by the pyrolysis of dicyandiamide (C2H4N4) utilizing the chemical vapor deposition (CVD) technique. The synthesis is done under low-pressure conditions of argon (similar to 3 Torr) and at a temperature of 600 degrees C. The as-synthesized g-C3N4 films are systematically studied for their structural/microstructural characterization using X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM and TEM), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR) and UV-visible spectroscopy techniques. The excitation-dependent photoluminescence (PL) spectra of the as-synthesized g-C3N4 film exhibited an intense, stable and broad emission peak in the visible region at similar to 459 nm. The emission spectra of free-standing g-C3N4 films show a blue shift and band sharpening compared to that of the g-C3N4 powder.
Más información
Título según WOS: | Facile synthesis of highly fluorescent free-standing films comprising graphitic carbon nitride (g-C3N4) nanolayers |
Título según SCOPUS: | Facile synthesis of highly fluorescent free-standing films comprising graphitic carbon nitride (g-C3N4) nanolayers |
Título de la Revista: | NEW JOURNAL OF CHEMISTRY |
Volumen: | 44 |
Número: | 6 |
Editorial: | Royal Society of Chemistry |
Fecha de publicación: | 2020 |
Página de inicio: | 2644 |
Página final: | 2651 |
Idioma: | English |
DOI: |
10.1039/c9nj05108b |
Notas: | ISI, SCOPUS |