Abstract

This work deals with the deposition of thin films using an atmospheric pressure direct current nitrogen plasma jet with tetramethyldisiloxane as precursor. The effect of O-2 flow and plasma discharge power on film deposition rate and film chemical characteristics is investigated in detail by surface profilometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is found that a higher deposition rate is obtained at higher oxygen flow rates and higher discharge powers. Increasing discharge power shows a certain amount of capability to transfer low oxygen content bonds to high oxygen content bonds. Organic films can be deposited in a pure nitrogen atmosphere. The film chemical composition can be tuned to a more inorganic structure by admixture of O-2 leading to an increase in SiO4 units at high oxygen flow rates.