Article ISI
VIII INTERNATIONAL CONGRESS OF ENGINEERING PHYSICS  (2015)

Refraction index modulation induced with transverse electric field in double tunnel-coupled GaAs/AlGaAs quantum wells

Shumilov, A. A.; Vinnichenko, M. Ya; Balagula, R. M.; Vorobjev, L. E.; Firsov, D. A.; Kulagina, M. M.; Vasil'iev, A. P.; Duque, C. A.; Tiutiunnyk, A.; Akimov, V.; Restrepo, R. L.; Tulupenko, V. N.; Ter-Martirosyan, A. L.; IOP

Abstract

Modulation of refraction index under transverse electric field was studied in structures with multiple tunnel-coupled GaAs/AlGaAs quantum wells in the spectral range corresponding to intersubband light absorption. The change of refraction index in electric field was calculated using Kramers-Kronig relation and experimentally determined spectra of intersubband light absorption in equilibrium conditions and under transverse electric field.

Más información

Título según WOS: ID WOS:000365252300075 Not found in local WOS DB
Título de la Revista: VIII INTERNATIONAL CONGRESS OF ENGINEERING PHYSICS
Volumen: 643
Editorial: IOP PUBLISHING LTD
Fecha de publicación: 2015
DOI:

10.1088/1742-6596/643/1/012076
Notas: ISI