A novel approach for the electrodeposition of epitaxial films of ZnSe on (111) and (100) InP using dimethylsulfoxide as a solvent

Henríquez R.; Gómez H.; Riveros, G; Guillemoles, JF; Froment, M; Lincot, D

Abstract

Results on the preparation and characterization of ZnSe epitaxial thin films obtained by electrodeposition on (111) and (100) n-type InP single-crystalline substrates, starting from elemental selenium dissolved in DMSO at 423 K, are reported. Voltammetric studies have been performed on these substrates and compared to SnO2:F covered glass substrates. They show substrate dependent behavior and the presence of parasitic faradaic reactions attributed to the formation of di-selenide anions. However, composition analysis of the films by electron dispersive spectroscopy revealed that, independent on the substrate, nearly stoichiometric ZnSe films are obtained within the deposition potential range. Scanning electron microscopy images present a specific effect of chloride ion on the films morphology, whereas their optical characterization showed a direct band gap value of 2.64 eV. The epitaxial quality of the deposits has been confirmed by reflection of high energy electron diffraction and atomic force microscopy techniques. © 2004 The Electrochemical Society. All rights reserved.

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Título según WOS: A novel approach for the electrodeposition of epitaxial films of ZnSe on (111) and (100) InP using dimethylsulfoxide as a solvent
Título según SCOPUS: A novel approach for the electrodeposition of epitaxial films of ZnSe on (111) and (100) InP using dimethylsulfoxide as a solvent
Título de la Revista: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volumen: 7
Número: 6
Editorial: TAYLOR & FRANCIS LTD
Fecha de publicación: 2004
Página de inicio: C75
Página final: C77
Idioma: English
DOI:

10.1149/1.1695534

Notas: ISI, SCOPUS