Abstract

This paper describes the design and construction of a BAR-mode high-efficiency active transmitting patch antenna (HEAP). The dimensions, shape, and location of the feeding point in the antenna are chosen to obtain an input impedance so the transistor works in the BAR mode at 1650 MHz with high collector efficiency and low bias voltage. A HEAP antenna with an efficiency of about 60%, V-cc = 3 V, and EIRP = 2.5 W has been developed. (C) 2001 John Wiley Sons, Inc.